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BFQ591
NPN 7 GHz wideband transistor
Rev. 04 -- 2 October 2007 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment. DESCRIPTION NPN wideband transistor in a SOT89 plastic package. MARKING TYPE NUMBER BFQ591 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM |s21|2 Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain Ts 90 C; note 1 IC = 70 mA; VCE = 8 V IC = 0; VCB = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C CONDITIONS open emitter open base MIN. - - - - 60 - - - - TYP. - - - - 90 0.8 7 11 10 MARKING CODE BCp
3 2 1
BFQ591
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
Fig.1 Simplified outline (SOT89).
MAX. 20 15 200 2.25 250 - - - -
UNIT V V mA W pF GHz dB dB
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NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts 90 C; note 1 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 90 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN.
BFQ591
MAX. 20 15 3 200 2.25 +150 175 V V V
UNIT
mA W C C
VALUE 38
UNIT K/W
Rev. 04 - 2 October 2007
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NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC = 0.1 mA; IB = 0 IE = 0.1 mA; IC = 0 IE = 0; VCB = 10 IC = 70 mA ; VCE = 8 V IC = 0; VCB = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; Tamb = 25 C f = 900 MHz f = 2 GHz |s21|2 Vo Notes insertion power gain output voltage IC = 70 mA; VCE = 12 V; f = 1 GHz; Tamb = 25 C note 2 - - - - 11 5.5 10 700 MIN. - - - - 60 - - TYP. - - - - 90 0.8 7
BFQ591
MAX. 20 15 3 100 250 - -
UNIT V V V nA pF GHz
collector-base breakdown voltage IC = 0.1 mA; IE = 0
- - - -
dB dB dB mV
s 21 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ------------------------------------------------------- dB . 2 2 ( 1 - s 11 ) ( 1 - s 22 ) 2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q+r) = 793.25 MHz.
2
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4 of 11
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
handbook, halfpage
3
MLD796
handbook, halfpage
250
MRA749
Ptot (W) 2
hFE 200
150
100 1 50
0 0 50 100 150 Ts (C) 200
0 10-2
10-1
1
10
IC (mA)
102
VCE = 12 V.
Fig.3 Fig.2 Power derating curve.
DC current gain as a function of collector current; typical values.
handbook, halfpage
1.2
MLD797
handbook, halfpage
8
MLD798
Cre (pF)
fT (GHz) 6
0.8
4
0.4 2
0 0 4 8 12 VCB (V) 16
0 1 10 IC (mA)
102
IC = 0; f = 1 MHz.
VCE = 12 V; f = 1 GHz.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
Fig.5
Transition frequency as a function of collector current.
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NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
handbook, halfpage
25
MLD799
handbook, halfpage
gain (dB) 20
10 gain
MLD800
(dB) 8 MSG
15 Gmax GUM
6 GUM
10
4
5
2
0 0 40 80 IC (mA) 120
0 0 40 80 IC (mA) 120
VCE = 12 V; f = 900 MHz.
VCE = 12 V; f = 2 GHz.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of collector current; typical values.
handbook, halfpage
40
MLD801
gain (dB) 30
MSG 20 GUM Gmax 10 MSG
0 10
102
103
f (MHz)
104
IC = 70 mA; VCE = 12 V.
Fig.8
Gain as a function of frequency; typical values.
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NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
handbook, halfpage
-30
MLD802
handbook, halfpage
dim (dB) -40
-30 d2
MLD803
(dB) -40
-50 -50 -60 -60
-70
-70
-80 0 40 80 IC (mA) 120
0
40
80
IC (mA)
120
Vo = 700 mV; VCE = 12 V; Tamb = 25 C; f(p+q+r) = 793.25 MHz.
Vo = 316 mV; VCE = 12 V; f(p+q) = 810 MHz.
Fig.9
Intermodulation distortion as function of collector current; typical values.
Fig.10 Second order intermodulation distortion as function of collector current; typical values.
Rev. 04 - 2 October 2007
7 of 11
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
SPICE parameters for the BFQ591 die. SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 Note 1. These parameters have not been extracted, the default values are shown. PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJ TR CJS VJS MJS FC VALUE 1.341 123.5 .988 75.85 9.656 232.2 2.134 10.22 1.016 1.992 294.1 211.0 997.2 5.00 1.000 5.00 1.275 920.6 0.000 1.110 3.000 3.821 600.0 348.5 13.60 71.73 10.28 1.929 0.000 1.409 219.4 166.5 2.340 543.7 0.000 750.0 0.000 733.2 UNIT fA - - V mA fA - - - V mA aA - A - eV - pF mV - ps - V mA deg fF mV - - ps F mV - -
BFQ591
handbook, halfpage
C cb
L1 B
LB B' E' LE C'
L2 C
C be
Cce
MBC964
L3
E
QLB = 50;QLE = 50;QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz.
Fig.11 Package equivalent circuit SOT89.
List of components (see Fig.11) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 16 150 150 1 0.01 1 1.2 1.2 VALUE fF fF fF nH nH nH nH nH UNIT
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NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
PACKAGE OUTLINE
BFQ591
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
D
B
A
bp3
E
HE
Lp 1 2 bp2 wM B bp1 e1 e 3 c
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13
OUTLINE VERSION SOT89
REFERENCES IEC JEDEC TO-243 JEITA SC-62
EUROPEAN PROJECTION
ISSUE DATE 06-03-16 06-08-29
Rev. 04 - 2 October 2007
9 of 11
NXP Semiconductors
BFQ591
NPN 7 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
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Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 04 - 2 October 2007
10 of 11
NXP Semiconductors
BFQ591
NPN 7 GHz wideband transistor
Revision history
Revision history Document ID BFQ591_N_4 Modifications: BFQ591_3 BFQ591_N_2 (9397 750 09252) BFQ591_N_1 (9397 750 09013) Release date 20071002 Data sheet status Product data sheet Product specification Preliminary specification Preliminary specification Change notice Supersedes BFQ591_3 BFQ591_N_2 BFQ591_N_1 -
*
Fig. 1 and package outline updated
20020204 20020102 20011203
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 October 2007 Document identifier: BFQ591_N_4

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